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UBA2070 データシートの表示(PDF) - Philips Electronics

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UBA2070
Philips
Philips Electronics Philips
UBA2070 Datasheet PDF : 20 Pages
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Philips Semiconductors
600 V CCFL ballast driver IC
Product specification
UBA2070
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
Rth(j-t)
PARAMETER
DESCRIPTION
thermal resistance from junction to ambient in free air
SO16
DIP16
thermal resistance from junction to tie-point
SO16
DIP16
VALUE
100
60
50
30
UNIT
K/W
K/W
K/W
K/W
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611D”.
CHARACTERISTICS
VDD = 13 V, VFVDD VSH = 13 V; Tamb = 25 °C; all voltages referenced to ground; see Fig.8; unless otherwise specified.
SYMBOL
PARAMETER
CONDITION
MIN. TYP. MAX. UNIT
High voltage supply
IL
leakage current on high voltage pins voltage at pins FVDD,
30 µA
GH and SH = 600 V
Start-up state (pin VDD)
VDD
supply voltage for defined driver
output
VDD(high)
VDD(low)
VDD(hys)
IDD(start)
VDD(clamp)
IDD(pd)
VDD(reset)
IDD
oscillator start voltage
oscillator stop voltage
start-stop hysteresis voltage
start-up current
clamp voltage
Power-down current
reset voltage
operating supply current
Ths = off; Tls = off
VDD < VDD(high)
Power-down mode
VDD = 9 V
Ths = off; Tls = off
fbridge = 40 kHz without
gate drive
12.4 13
8.6 9.1
3.5 3.9
170
10 11
170
4.5 5.5
1.5
6
V
13.6 V
9.6 V
4.4 V
200 µA
12 V
200 µA
7
V
2.2 mA
Reference voltage (pin VREF)
Vref
reference voltage
Iref
reference current
Zo
Vref/T
output impedance
temperature coefficient of Vref
Current supply (pin IREF)
VI
input voltage
II
input current
IL = 10 µA
source
sink
IL = 1 mA source
IL = 10 µA;
Tamb = 25 to 150 °C
2.86 2.95 3.04 V
1
mA
1
mA
3
0.64
%/K
2.5
V
65
95 µA
2002 Oct 24
10

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