S8208(2004) データシートの表示（PDF） - Toshiba
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S8208 Datasheet PDF : 7 Pages
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Electrical Characteristics (Ta = 25°C)
TPCS8208
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯ ±10 µA
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
10
µA
V (BR) DSS
V (BR) DSX
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = −12 V
20
⎯
⎯
V
8
⎯
⎯
Vth
VDS = 10 V, ID = 200 µA
0.5
⎯
1.2
V
VGS = 2.0 V, ID = 4.2 A
⎯
24
35
RDS (ON) VGS = 2.5 V, ID = 4.2 A
⎯
18
22 mΩ
VGS = 4.0 V, ID = 4.8 A
⎯
13
17
|Yfs|
VDS = 10 V, ID = 3.0 A
7.5
15
⎯
S
Ciss
⎯ 2160 ⎯
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
210
⎯
pF
Coss
⎯ 230 ⎯
tr
VGS 5 V
ton
0V
⎯
5
⎯
ID = 3 A
VOUT
⎯
13
⎯
ns
tf
⎯
10
⎯
VDD ∼− 10 V
toff
Duty <= 1%, tw = 10 µs
⎯
53
⎯
Qg
Qgs1
Qgd
VDD ∼− 16 V, VGS = 5 V, ID = 6 A
⎯
22
⎯
⎯
4
⎯
nC
⎯
5
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
IDRP
VDSF
Test Condition
⎯
IDR = 6 A, VGS = 0 V
Min Typ. Max Unit
⎯
⎯
24
A
⎯
⎯
−1.2
V
3
2004-07-06
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