TEMD5020 データシートの表示（PDF） - Vishay Semiconductors

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TEMD5020

Silicon PIN Photodiode

Vishay Semiconductors 

TEMD5020

Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward Voltage

Breakdown Voltage

Reverse Dark Current

Diode capacitance

IF = 50 mA

VF

1

1.3

V

IR = 100 µA, E = 0

V(BR)

60

V

VR = 10 V, E = 0

Iro

2

30

nA

VR = 0 V, f = 1 MHz, E = 0

CD

48

pF

Optical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Open Circuit Voltage

Temp. Coefficient of Vo

Short Circuit Current

Temp. Coefficient of Ik

Reverse Light Current

Angle of Half Sensitivity

Ee = 1 mW/cm2, λ = 950 nm

Ee = 1 mW/cm2, λ = 950 nm

Ee = 1 mW/cm2, λ = 950 nm

Ee = 1 mW/cm2, λ = 950 nm

Ee = 1 mW/cm2, λ = 950 nm,

VR = 5 V

Wavelength of Peak Sensitivity

Range of Spectral Bandwidth

Noise Equivalent Power

Rise Time

Fall Time

VR = 10 V, λ = 950 nm

VR = 10 V, RL = 1 kΩ, λ = 820 nm

VR = 10 V, RL = 1 kΩ, λ = 820 nm

Symbol

Vo

TKVo

Ik

TKIk

Ira

ϕ

λp

λ0.5

NEP

tr

tf

Min

Typ.

Max

350

-2.6

32

0.1

25

35

± 65

900

600 to 1050

4 x 10-14

100

100

Typical Characteristics

Tamb = 25 °C unless otherwise specified

1000

1.4

Unit

mV

mV/K

µA

%/K

µA

deg

nm

nm

W/√ Hz

ns

ns

100

10

1

20

94 8403

VR = 10 V

40

60

80

100

Tamb - Ambient Temperature (°C)

Figure 1. Reverse Dark Current vs. Ambient Temperature

1.2

VR = 5 V

λ = 950 nm

1.0

0.8

0.6

0

94 8409

20

40 60

80 100

Tamb - Ambient Temperature (°C)

Figure 2. Relative Reverse Light Current vs. Ambient Temperature

www.vishay.com

2

Document Number 84685

Rev. 1.2, 12-Aug-05

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