TC58DVM92A1FTI0 データシートの表示（PDF） - Toshiba
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TC58DVM92A1FTI0 Datasheet PDF : 44 Pages
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TC58DVM92A1FTI0
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta - 40° to 85°C, VCC 2.7 V to 3.6 V)
SYMBOL
PARAMETER
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
tWW
tRR
tRP
tRC
tREA
tCEA
tALEA
tCEH
tREAID
tOH
tRHZ
tCHZ
tREH
tIR
tRSTO
tCSTO
tRHW
tWHC
tWHR
tR
tWB
tAR2
tRB
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
WP High to WE Low
Ready to RE Falling Edge
Read Pulse Width
Read Cycle Time
RE Access Time (Serial Data Access)
CE Access Time (Serial Data Access, ID Read)
ALE Access Time (ID Read)
CE High Time for Last Address in Serial Read Cycle
RE Access Time (ID Read)
Data Output Hold Time
RE High to Output High Impedance
CE High to Output High Impedance
RE High Hold Time
Output-High-impedance-to- RE Falling Edge
RE Access Time (Status Read)
CE Access Time (Status Read)
RE High to WE Low
WE High to CE Low
WE High to RE Low
Memory Cell Array to Starting Address
WE High to Busy
ALE Low to RE Low (Read Cycle)
RE Last Clock Rising Edge to Busy (in Sequential Read)
tCRY CE High to Ready (When interrupted by CE in Read Mode)
tRST Device Reset Time (Read/Program/Erase)
MIN
MAX
UNIT
0
ns
10
ns
0
ns
10
ns
25
ns
0
ns
10
ns
20
ns
10
ns
50
ns
15
ns
100
ns
20
ns
35
ns
50
ns
35
ns
45
ns
45
ns
100
ns
35
ns
10
ns
30
ns
20
ns
15
ns
0
ns
35
ns
45
ns
0
ns
30
ns
30
ns
25
Ps
200
ns
50
ns
200
ns
1
Ps
tr ( RY/BY )
6/10/500
Ps
NOTES
(2)
(1) (2)
AC TEST CONDITIONS
PARAMETER
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
CONDITION
2.4 V, 0.4 V
3 ns
1.5 V, 1.5 V
1.5 V, 1.5 V
CL (100 pF) 1 TTL
2003-07-11 4/44
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