TB6674FAG データシートの表示（PDF） - Toshiba

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TB6674FAG

BiCD Integrated Circuit Silicon Monolithic

Toshiba 

TB6674PG/FG/FAG

Electrical Characteristics (Unless otherwise specified, Ta = 25°C, VCC = 5 V, VS1 = 12 V,

and VS2A = 5 V)

Characteristic

Supply current

Input voltage

High

Low

Symbol

ICC1

ICC2

ICC3

VIN H

VIN L

Test

Cir−

cuit

Test Condition

PS: H, VS2B: H

1 PS: L, VS2B: H

VS2B: L

―

INA, INB, PS, Vs2B

Min Typ. Max Unit

―

3

―

3

―

1

2.0

―

－0.2 ―

5

mA

5

20

μA

Vcc

V

0.8

Input hysteresis voltage*

VINhys

1

⎯

90

⎯

mV

Input current

IIN (H)

IIN (L)

INA, INB, PS, Vs2B

1

VIN = 5.0 V

Built in pull-down resistance.

VIN = 0 V

5

20

38

μA

⎯

⎯

1

μA

Output ON

resistance

(Note)

TB6674PG

TB6674FG

Ron 1H

Ron 2H

Ron L

Ron 1H

2 PS: L, VS2B: H

3 PS: H, VS2B: H

2 VS2B: H

2 PS: L, VS2B: H

IOUT = 400 mA ―

2

5

IOUT = 100 mA ―

7

16

IOUT = 400 mA ―

0.9

3.5

Ω

IOUT = 200 mA ―

2

5

TB6674FAG Ron 2H

3 PS: H, VS2B: H

IOUT = 50 mA

―

7

16

Ron L

2 VS2B: H

IOUT = 200 mA ―

0.9

3.5

Diode forward voltage

VF U

VF L

4 IF = 350 mA, PS = L

―

1.2

2.5

V

―

1.0

2.2

Delay time

tpLH

tpHL

― IN − φ

―

0.5

―

μs

―

0.5

―

Thermal shutdown circuit*

TSD

― (Design target only)

―

160

―

°C

TSD hysteresis *

TSDhys

― (Design target only)

―

20

―

°C

* ： Toshiba does not implement testing before shipping.

5

Ver.3 2010-07-07

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