TB6674FAG データシートの表示（PDF） - Toshiba

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TB6674FAG

BiCD Integrated Circuit Silicon Monolithic

Toshiba 

TB6674PG/FG/FAG

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Supply voltage

VCC

6.0

VS1

24.0

V

VS2

Up to VCC

TB6674PG

IO (PEAK)

±400

TB6674FG

IO (START)

±350

Output current

IO (HOLD)

±100

mA

IO (PEAK)

±200

TB6674FAG

IO (START)

±100

IO (HOLD)

±50

Input voltage

VIN

Up to VCC

V

TB6674PG

Power

dissipation

TB6674FG

PD

1.4 (Note 1)

2.7 (Note 2)

0.9 (Note 3)

W

1.4 (Note 4)

TB6674FAG

0.78 (Note 5)

Operating temperature

Storage temperature

Topr

－30 to 75

°C

Tstg

－55 to 150

°C

Note 1: IC only

Note 2: This value is obtained if mounting is on a 50 mm × 50 mm × 0.8 mm PCB, 60 % or more of which is occupied

by copper.

Note 3: IC only

Note 4: This value is obtained if mounting is on a 60 mm × 30 mm × 1.6 mm PCB, 50 % or more of which is occupied

by copper.

Note 5: This value is obtained if mounting is on a 50 mm × 50 mm × 1.6 mm PCB, 40 % or more of which is occupied

by copper.

Operating Conditions (Ta = 25°C)

Characteristic

Symbol

Min.

Typ.

Max.

Unit

VCC

4.5

Supply voltage

VS1

8.0

VS2A

2.7

TB6674PG

IO

－

TB6674FG

Output current

TB6674FAG

IO

－

－

5.5

－

22.0

V

－

5.5

－

±350

mA

－

±100

Input voltage

VIN

0

Maximum frequency of input pulse

fIN

－

Minimum resolution of input pulse

tw

20

－

VCC

V

－

25

kHz

－

－

μs

Value of ON resistance tends to increase when the difference between Vs1 and Vs2A becomes 5 V or less.

4

Ver.3 2010-07-07

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