SSD20N10-250D データシートの表示（PDF） - Secos Corporation.

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SSD20N10-250D

N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS(ON) 280mΩ

Secos Corporation. 

Elektronische Bauelemente

SSD20N10-250D

N-Ch Enhancement Mode Power MOSFET

11A, 100V, RDS(ON) 280mΩ

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Static

Gate-Threshold Voltage

Gate-Body Leakage

VGS(th)

1.0

-

-

V VDS= VGS, ID = 250 μA

IGSS

-

-

±100

nA VDS = 0V, VGS= 20V

Zero Gate Voltage Drain Current

On-State Drain Current a

IDSS

ID(on)

-

-

1

VDS= 80V, VGS= 0V

μA

-

-

25

VDS= 80V, VGS= 0V, TJ=55°C

34

-

-

A VDS = 5V, VGS= 10V

Drain-Source On-Resistance a

Forward Transconductance a

Diode Forward Voltage

RDS(ON)

gfs

VSD

-

-

280

-

-

355

-

5

-

-

1

-

Dynamic b

VGS= 10V, ID= 4.5 A

mΩ

VGS= 4.5V, ID= 4 A

S VDS= 15V, ID= 4.5 A

V IS= 9 A, VGS= 0 V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

-

10

-

-

2

-

VDS = 50 V

nC VGS = 5.5 V

Qgd

-

7.8

-

ID = 4.5 A

Turn-on Delay Time

Td(on)

-

4.8

-

Rise Time

Tr

-

4

-

Turn-off Delay Time

Td(off)

- 12.8 -

Fall Time

Tf

-

4

-

Notes

a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.

b. Guaranteed by design, not subject to production testing.

VDD= 50 V

nS

ID= 4.5 A

VGEN = 10 V

RL= 11.1 

http://www.SeCoSGmbH.com/

11-Aug-2010 Rev.A

Any changes of specification will not be informed individually.

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