SSD20N10-250D データシートの表示（PDF） - Secos Corporation.
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SSD20N10-250D Datasheet PDF : 2 Pages
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Elektronische Bauelemente
SSD20N10-250D
N-Ch Enhancement Mode Power MOSFET
11A, 100V, RDS(ON) 280mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable
and battery-powered products such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology.
A
B
C
D
PRODUCT SUMMARY
VDS(V)
100
PRODUCT SUMMARY
RDS(on) m(
280@VGS= 10V
355@VGS= 4.5V
ID(A)
11
10
Drain
GE
K
HF
N
O
P
M
J
Gate
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4
6.8
J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current a
ID @TC=25℃
11
A
Pulsed Drain Current b
IDM
36
A
Continuous Source Current (Diode Conduction) a
IS
30
A
Total Power Dissipation a
PD @TC=25℃
50
W
Operating Junction and Storage Temperature Range TJ, TSTG
-55 ~ 175
°C
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
°C / W
Maximum Thermal Resistance Junction-Case
RθJC
3.0
°C / W
Notes：
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
11-Aug-2010 Rev.A
Any changes of specification will not be informed individually.
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