SIP11203DB データシートの表示（PDF） - Vishay Semiconductors

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SIP11203DB

SiP11203 Demonstration Board

Vishay Semiconductors 

Secondary Reference

Voltage VREF(0.5 V/DIV)

SiP11203DB

Vishay Siliconix

VCPD Waveform

(1 V/DIV)

Output Voltage

Start Up Waveform

(1 V/DIV)

Output Voltage

(1 V/DIV)

Secondary Synchronous

MOSFET Gate Waveform

(2 V/DIV)

500 µS/DIV

(a)

2.00 µS/DIV

(b)

Figure 12. (a) Rise of VREF and VO during startup (b) VCpd, OUTA and VO during shutdown (both at 48 V input and 15 A load)

Protection

Over-current detection and protection is performed

within the Si9122 in conjunction with the current sense

resistor R22. Over-voltage protection is incorporated in

the SiP11203 and can be set using the potential

divider R3-R4. Startup into an over-voltage is illustrated

in Figure 13, where the over-voltage is discharged,

and the switching and reference voltage are then dis-

abled. Thermal protection is implemented in IC U4, an

LM26 temperature sensing IC, which will disable oper-

ation if the PCB temperature exceeds 85 ºC, and will

re-enable once the temperature drops to 85 ºC.

SiP11203 reference voltage (TP18). The locations for

these test points are shown in Figure 14. The bottom

side component locations are also shown.

Converter Output

Voltage (1 V/DIV)

Secondary Reference

Voltage VREF(0.5 V/DIV)

Secondary MOSFET

Gate Signal (5 V/DIV)

100 µS/DIV

Figure 13. Vo, Vref and OUTA on startup into an over-voltage.

Test Points

Several test points are provided on the topside of the

demonstration board for ease of probing. These are

the primary side MOSFET gate signals (TP10 and

TP11), the primary current sense signal (TP16), pri-

mary VCC (TP14), pulse transformer primary signals

SRL and SRH (TP3 and TP4), secondary side syn-

chronous MOSFET gate signals (TP19 and TP20) and

Document Number: 74254

S-60997–Rev. A, 12-Jun-06

Figure 14. SiP11203 Demonstration Board Component Layout

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