RCD040N25 データシートの表示（PDF） - ROHM Semiconductor
部品番号
コンポーネント説明
一致するリスト
RCD040N25 Datasheet PDF : 7 Pages
| |||
RCD040N25
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
10
VDS=10V
pulsed
1
Ta= 125°C
Ta= 75°C
0.1
Ta= 25°C
Ta= -25°C
0.01
0.01
0.1
1
10
Drain Current : ID [A]
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
2400
2200
2000
Ta=25°C
pulsed
1800
1600
1400
1200
1000
800
ID=2.0A
ID=4.0A
600
400
200
0
0246
8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
15
Ta=25°C
VDD=125V
ID=4A
Pulsed
10
5
0
0
5
10
15
Total Gate Charge : Qg [nC]
Fig.8 Source Current vs. Source-Drain Voltage
10
VGS=0V
pulsed
Ta= 125°C
1
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
0.0
0.5
1.0
1.5
Source-Drain Voltage : VSD [V]
10000
1000
100
Fig.10 Switching Characteristics
td(off)
tf
VDD≒125V
VGS=10V
RG=10W
Ta=25°C
Pulsed
10
tr
td(on)
1
0.01
0.1
1
10
Drain Current : ID [A]
1000
Fig.12 Typical Capacitance vs. Drain-Source Voltage
Ciss
100
Coss
10
Ta=25°C
Crss
f=1MHz
VGS=0V
1
0.01
0.1
1
10
100
1000
Drain-Source Voltage : VDS [V]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.11 - Rev.A
Share Link: 