RCD040N25 データシートの表示（PDF） - ROHM Semiconductor

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RCD040N25

10V Drive Nch MOSFET

ROHM Semiconductor 

 Electrical characteristics (Ta = 25C)

Parameter

Symbol Min.

Gate-source leakage

IGSS

-

Drain-source breakdown voltage V(BR)DSS 250

Zero gate voltage drain current IDSS

-

Gate threshold voltage

Static drain-source on-state

resistance

VGS (th)

3.5

RDS (on*)

-

Forward transfer admittance

l Yfs l* 1.2

Input capacitance

Ciss

-

Output capacitance

Coss

-

Reverse transfer capacitance

Crss

-

Turn-on delay time

td(on) *

-

Rise time

tr *

-

Turn-off delay time

td(off) *

-

Fall time

tf *

-

Total gate charge

Qg *

-

Gate-source charge

Qgs *

-

Gate-drain charge

Qgd *

-

*Pulsed

Typ.

-

-

-

-

780

-

410

30

15

17

15

20

12

9.0

3.5

3.5

Max.

100

-

10

5.5

1000

-

-

-

-

-

-

-

-

-

-

-

Unit

Conditions

nA VGS=30V, VDS=0V

V ID=1mA, VGS=0V

A VDS=250V, VGS=0V

V VDS=10V, ID=1mA

m ID=2A, VGS=10V

S VDS=10V, ID=2A

pF VDS=25V

pF VGS=0V

pF f=1MHz

ns VDD 125V, ID=2A

ns VGS=10V

ns RL=62.5

ns RG=10

nC VDD 125V, ID=4A

nC VGS=10V

nC RL=31.25, RG=10

Body diode characteristics (Source-Drain)

Parameter

Symbol Min.

Forward Voltage

VSD *

-

*Pulsed

Typ.

-

Max. Unit

Conditions

1.5

V Is=4A, VGS=0V

Data Sheet

www.rohm.com

© 2011 ROHM Co., Ltd. All rights reserved.

2/6

2011.11 - Rev.A

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