IRF234 データシートの表示（PDF） - Intersil
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IRF234 Datasheet PDF : 7 Pages
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IRF234, IRF235, IRF236, IRF237
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF234
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS
250
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . VDGR
250
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
8.1
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
5.1
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM
32
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . PD
75
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .Tpkg
180
-55 to 150
300
260
IRF235
250
250
6.5
4.1
26
±20
75
0.6
180
-55 to 150
300
260
IRF236
275
275
8.1
5.1
32
±20
75
0.6
180
-55 to 150
300
260
IRF237
275
275
6.5
4.1
26
±20
75
0.6
180
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
oC
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF234, IRF235
BVDSS VGS = 0V, ID = 250µA, (Figure 10)
250 -
-
V
IRF236, IRF237
275 -
-
V
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF234, IRF236
VGS(TH) VGS = VDS, ID = 250µA
2.0
-
4.0
V
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V TJ =125oC -
-
25 µA
- 250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V,
(Figure 7)
8.1
-
-
A
IRF235, IRF237
6.5
-
-
A
Gate to Source Leakage
IGSS VGS = ±20V
Drain to Source On-State Resistance (Note 2) rDS(ON) VGS = 10V, ID = 4.1A, (Figures 8, 9)
IRF234, IRF236
-
- ±100 nA
- 0.32 0.45 Ω
IRF235, IRF237
- 0.48 0.68 Ω
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs VDS ≥ 50V, ID = 4.1A, (Figure 12)
2.9 4.3 -
S
td(ON)
tr
td(OFF)
VDD = 125V, ID ≈ 8.1A, RG = 12Ω, RL = 1.1Ω
VGS = 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
9.1 14
ns
-
23 35
ns
-
31 47
ns
tf
-
19 29
ns
Qg(TOT) VGS = 10V, ID = 8.1A, VDS = 0.8 x Rated BVDSS -
24 35 nC
IG(REF) = 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Qgs Operating Temperature
- 5.1 -
nC
Qgd
-
12
-
nC
5-2
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