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P4C164L-100CMB データシートの表示(PDF) - Semiconductor Corporation

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P4C164L-100CMB
PYRAMID
Semiconductor Corporation PYRAMID
P4C164L-100CMB Datasheet PDF : 16 Pages
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P4C164
MAXIMUM RATINGS(1)
Symbol
Parameter
VCC
Power Supply Pin with
Respect to GND
V
TERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
TA
Operating Temperature
Value Unit
–0.5 to +7 V
–0.5 to
V +0.5 V
CC
–55 to +125 °C
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade(2)
Ambient
Temperature
Military
–55°C to +125°C
Industrial –40°C to +85°C
Commercial 0°C to +70°C
GND
0V
0V
0V
V
CC
5.0V ± 10%
5.0V ± 10%
5.0V ± 10%
Symbol Parameter
TBIAS
Temperature Under
Bias
TSTG
Storage Temperature
P
Power Dissipation
T
I
DC Output Current
OUT
Value Unit
–55 to +125 °C
–65 to +150 °C
1.0
W
50
mA
CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz
Symbol
Parameter
Conditions Typ. Unit
CIN
COUT
Input Capacitance
V = 0V
IN
5 pF
Output Capacitance VOUT = 0V 7 pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
Symbol
Parameter
Test Conditions
P4C164
Min Max
P4C164L
Unit
Min Max
VIH Input High Voltage
2.2 VCC +0.5 2.2 VCC +0.5 V
VIL Input Low Voltage
VHC CMOS Input High Voltage
VLC CMOS Input Low Voltage
–0.5(3)
0.8
–0.5(3)
0.8
V
VCC –0.2 VCC +0.5 VCC –0.2 VCC +0.5 V
–0.5(3)
0.2
–0.5(3)
0.2
V
VCD Input Clamp Diode Voltage VCC = Min., IIN = –18 mA
VOL
Output Low Voltage
(TTL Load)
IOL = +8 mA, VCC = Min.
–1.2
–1.2 V
0.4
0.4 V
VOH
Output High Voltage
(TTL Load)
IOH = –4 mA, VCC = Min.
2.4
2.4
V
ILI Input Leakage Current
VCC = Max.
VIN = GND to VCC
Mil. –10
Ind./Com’l. –5
+10
+5
–5
n/a
+5
n/a µA
ILO Output Leakage Current
VCC = Max., CE = VIH,
Mil. –10
VOUT = GND to VCC Ind./Com’l. –5
+10
+5
–5
n/a
+5
n/a µA
CE1 VIH or
ISB
Standby Power Supply
CE2 VIL,
Current (TTL Input Levels) VCC= Max,
Mil. ___
40
___
40 mA
Ind./Com’l. ___
30
___
n/a
f = Max., Outputs Open
Standby Power Supply
CE1 VHC or
CE2 VLC,
Mil. ___
25
___
1 mA
Ind./Com’l. ___
15
___
n/a
ISB1 Current
V = Max,
CC
(CMOS Input Levels)
f = 0, Outputs Open
VIN VLC or VIN VHC
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
Document # SRAM115 REV F
Page 2 of 16

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