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HB54A5129F1-10B データシートの表示(PDF) - Elpida Memory, Inc

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HB54A5129F1-10B
Elpida
Elpida Memory, Inc Elpida
HB54A5129F1-10B Datasheet PDF : 16 Pages
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DATA SHEET
512MB Registered DDR SDRAM DIMM
HB54A5129F1-A75B/B75B/10B (64M words × 72 bits, 1 Bank)
Description
Features
The HB54A5129F1 is a 64M × 72 × 1 bank Double
Data Rate (DDR) SDRAM Module, mounted 18 pieces
of 256Mbits DDR SDRAM (HM5425401BTT) sealed in
TSOP package, 1 piece of PLL clock driver, 2 pieces of
register driver and 1 piece of serial EEPROM (2k bits
EEPROM) for Presence Detect (PD). Read and write
operations are performed at the cross points of the CK
and the /CK. This high-speed data transfer is realized
by the 2-bit prefetch-pipelined architecture. Data
strobe (DQS) both for read and write are available for
high speed and reliable data bus design. By setting
extended mode register, the on-chip Delay Locked
Loop (DLL) can be set enable or disable. An outline of
the products is 184-pin socket type package (dual lead
out). Therefore, it makes high density mounting
possible without surface mount technology. It provides
common data inputs and outputs. Decoupling
capacitors are mounted beside each TSOP on the
module board.
184-pin socket type package (dual lead out)
Outline: 133.35mm (Length) × 43.18 (Height) ×
4.00mm (Thickness)
Lead pitch: 1.27mm
2.5V power supply (VCC/VCCQ)
SSTL-2 interface for all inputs and outputs
Clock frequency: 143MHz/133MHz/125MHz (max.)
Data inputs and outputs are synchronized with DQS
4 banks can operate simultaneously and
independently (Component)
Burst read/write operation
Programmable burst length: 2, 4, 8
Burst read stop capability
Programmable burst sequence
Sequential
Interleave
Start addressing capability
Even and Odd
Programmable /CAS latency (CL): 3, 3.5
8192 refresh cycles: 7.8µs (8192/64ms)
2 variations of refresh
Auto refresh
Self refresh
Document No. E0090H40 (Ver. 4.0)
Date Published August 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory,Inc. 2001-2002
Hitachi, Ltd. 2000
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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