MC9S08SF4 データシートの表示（PDF） - Freescale Semiconductor
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MC9S08SF4 Datasheet PDF : 32 Pages
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DC Characteristics
Table 4. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Series resistance
R1
Human
Body
Storage capacitance
C
Number of pulses per pin
—
1500
Ω
100
pF
1
Minimum input voltage limit
—
Latch-up
Maximum input voltage limit
—
–2.5
V
7.5
V
Table 5. ESD and Latch-Up Protection Characteristics
No.
Rating1
Symbol
Min
Max Unit
1
Human body model (HBM)
VHBM
±2000
—
V
2
Charge device model (CDM)
VCDM
±500
—
V
3
Latch-up current at TA = 125 °C
ILAT
±100
—
mA
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
3.6 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 6. DC Characteristics (Temperature Range = –40 to 125 °C Ambient)
Num
1
2
3
4
5
6
7
C
Parameter
P Supply voltage (run, wait, and stop modes.)
Low-voltage detection threshold — high range
P
(VDD falling)
(VDD rising)
Low-voltage detection threshold — low range
P
(VDD falling)
(VDD rising)
Low-voltage warning threshold — high range
P
(VDD falling)
(VDD rising)
Low-voltage warning threshold — low range
P
(VDD falling)
(VDD rising)
Low-voltage inhibit reset/recover hysteresis
D
5V
3V
P
Bandgap voltage reference
Factory trimmed at VDD = 3.0 V, Temp = 25 °C
P
Input high voltage (2.7 V ≤ VDD ≤ 5.5 V) (all
digital inputs)
P
Input low voltage (2.7 V ≤ VDD ≤ 5.5 V) (all
digital inputs)
Symbol
VDD
VLVDH
VLVDL
VLVWH
VLVWL
Vhys
VBG
VIH
VIL
Min
2.7
3.9
4.0
2.48
2.54
2.66
2.72
2.84
2.90
—
—
1.185
0.65 × VDD
VSS – 0.3
Typical
—
—
—
2.56
2.62
—
—
—
—
100
60
1.200
—
—
Max
Unit
5.5
V
4.1
V
4.2
V
2.64
V
2.7
V
2.82
V
2.88
V
3.00
V
3.06
V
—
mV
—
mV
1.215
V
VDD + 0.3
V
0.35 × VDD V
MC9S08SF4 Series MCU Data Sheet, Rev. 2
8
Freescale Semiconductor
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