MC06XSD200FK データシートの表示（PDF） - Freescale Semiconductor

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MC06XSD200FK

Dual 6.0 mOhm High Side Switch

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

parameter

Symbol

Min

Typ

Max

Unit

ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1)

ON-Resistance, Drain-to-Source (IHS = 3.0 A, TJ = 25 °C)

CSNS_ratio = 0

VPWR = 8.0 V

VPWR = 28 V

VPWR = 36 V

RDS(ON)25

–

–

–

–

6.0

m

–

6.0

–

6.0

ON-Resistance, Drain-to-Source (IHS = 3.0 A,TJ = 150 °C)

CSNS_ratio = 0

VPWR = 8.0 V

VPWR = 28 V

VPWR = 36 V

RDS(ON)150

–

–

–

–

12

m

–

12

–

12

ON-Resistance, Drain-to-Source difference from one channel to the other RDS(ON)150

in parallel mode (IHS = 1.0 A,TJ = 150 °C) CSNS_ratio = X

-0.7

–

+0.7

m

ON-Resistance, Source-Drain (IHS = -3.0 A, TJ = 150 °C, VPWR = -24 V)

RSD(ON)150

–

Max. detectable wiring length (2.5 mm²) for severe short-circuit detection

(see Severe Short-circuit Fault (latchable fault)):

LSHORT

–

12

m

High slew rate selected

Medium slew rate selected:

Low slew rate selected:

14

48

80

cm

30

100

170

60

200

340

Overcurrent Detection thresholds with CSNS_ratio bit = 0 (CSR0)

Overcurrent Detection thresholds with CSNS_ratio bit = 1(CSR1)

Output (HS[x]) leakage Current in sleep state (positive value = outgoing)

VHS,OFF = 0 V (VHS,OFF = output voltage in OFF state)

VHS,OFF = VPWR, device in sleep state (VPWR = 24 V)

I_OCH1_0

I_OCH2_0

I_OCM1_0

I_OCM2_0

I_OCL1_0

I_OCL2_0

I_OCL3_0

I_OCH1_1

I_OCH2_1

I_OCM1_1

I_OCM2_1

I_OCL1_1

I_OCL2_1

I_OCL3_1

IOUT_LEAK

90.0

110.0

128.3

A

58.3

70.0

81.7

36.1

43.3

50.6

22.2

26.7

31.1

15.0

18.0

21.0

10.0

12.0

14.0

5.0

6.0

7.0

30.6

36.7

42.8

A

19.4

23.3

27.2

12.0

14.4

16.9

7.4

8.9

10.4

5.0

6.0

7.0

3.3

4.0

4.7

1.6

2.0

2.4

–

–

+16

µA

-40.0

–

+5.0

Switch Turn-on threshold for supply overvoltage (VPWR -GND)

VD_GND(CLAMP)

58

–

66

V

Switch turn-on threshold for drain-source overvoltage (@ IHS = 100 mA)

VDS(CLAMP)

58

–

66

V

Switch turn-on threshold for Drain-Source overvoltage difference from

VDS(CLAMP)

one channel to the other in parallel mode (@ IHS = 100 mA)

-2.0

–

+2.0

V

06XSD200

9

Analog Integrated Circuit Device Data

Freescale Semiconductor

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