MC06XSD200FK データシートの表示（PDF） - Freescale Semiconductor

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MC06XSD200FK

Dual 6.0 mOhm High Side Switch

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics (continued)

Unless specified otherwise: 8.0 V  VPWR  36 V, 3.0 V  VDD  5.5 V, - 40 C  TA  125 C, GND = 0 V. Typical values are

average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.

parameter

Symbol

Min

Typ

Max

Unit

ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) (CONTINUED)

ESR0 Output Current Sensing Error (%, after offset compensation(17)) at ESR0_ERR(Comp)

output Current level (Sense ratio CSR0 selected):

TJ=-40 C

9.0 A

-10

–

4.5 A

-10

–

2.25 A

-10

–

1.13 A

TJ=125C

-10

–

9.0 A

4.5 A

2.25 A

1.13 A

TJ=25 to 125C

-9.0

–

-8.0

–

-9.0

–

-9.0

–

9.0 A

4.5 A

2.25 A

1.13 A

-9.0

–

-8.0

–

-9.0

–

-9.0

–

ESR1 Output Current Sensing Error (%, uncompensated (18)) at output

Current level (Sense ratio CSR1 selected):

ESR1_ERR

TJ=-40 C

2.25 A

-16

–

TJ=125C

2.25 A

-12

–

TJ=25 to 125C

2.25 A

-12

–

%

10

10

10

10

9.0

8.0

9.0

9.0

9.0

8.0

9.0

9.0

%

16

12

12

Notes:

17. See note (16), but with ICSNS_MEAS obtained after compensation of I_LOAD_ERR_RAND (see Activation and Use of Offset Compensation).

Further accuracy improvements can be obtained by performing a 1 or 2 point calibration

18. ESRx_ERR=(ICSNS_MEAS / ICSNS_MODEL) -1, with ICSNS_MODEL = (I(HS[x])+ I_LOAD_ERR_SYS) * CSRx , (I_LOAD_ERR_SYS defined above, see

section Current Sense Error Model). With this model, load current becomes: I(HS[x]) = ICSNS / CSRx - I_LOAD_ERR_SYS

Analog Integrated Circuit Device Data

Freescale Semiconductor

06XSD200

11

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