L6382D5 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

一致するリスト

L6382D5

Power management unit for microcontrolled ballast

STMicroelectronics 

L6382D5

Electrical characteristics

Table 4. Electrical characteristcs (TJ = 25°C, VCC = 13V, CDRIVER = 1nF

unless otherwise specified) (continued)

Symbol Pin

Parameter

Test condition

Min Typ

TFALL

12 Fall time

Cload = 1nF

75

TDELAY

12

Propagation delay high to low and low to

(LGI to LSG)

high

RB

12 Pull down Resistor to OUT

20

High-side floating gate-driver supply

ILKBOOT

ILKOUT

RDS(on)

11

VBOOT pin leakage

current

VBOOT = 580V

13

OUT pin leakage

current

VOUT = 562V

Synchronous

bootstrap

diode on-

VLVG = HIGH

150

resistance

Forward Voltage

Drop

at 10 mA forward current

2.4

Forward Current

at 5V forward voltage

drop

20

VREF

VREF

IREF

20 Reference voltage 15mA load.

4.9

5

20 Load regulation IRef = -3 to +30 mA

-20

20 Voltage change

15mA load; Vcc = 9V to

15V

20

VREF latched

protection

VCC from 0 to VCCON

20

VREF Clamp

@3mA

during start-up; Vcc from

VREF(OFF) to 0 during

1.2

shut-down; VREF < 2V

20

Current Drive

Capability

Save mode

-3

-3

Overcurrent buffer stage

VCSI

ICSI

19 Comparator Level

0.52 0.54

19 Input Bias Current

Propagation delay CSO turn off to LSG low

Max Unit

ns

300 ns

KΩ

5 µA

5 µA

Ω

V

mA

5.1 V

2 mV

15 mV

3.2 V

1.8 V

+30 mA

+10 mA

0.56 V

500 nA

200 ns

9/21

Share Link: