DS_K9F1208U0M データシートの表示（PDF） - Samsung

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DS_K9F1208U0M

64M x 8 Bit NAND Flash Memory

Samsung 

K9F1208U0M-YCB0, K9F1208U0M-YIB0

FLASH MEMORY

Revision No History

Draft Date Remark

0.5

1. Addition of new operation : Multi-Plane Copy-Back Program.

May. 30th 2001 Preliminary

- Multi-Plane Copy-Back Program is extended operation of one-page

Copy-Back program.

=> After successive reading of multiple 528 byte data set at the source

planes, the above data are moved to internal page registers and same

procedure as Multi-Plane Page Programming is executed.

0.6

1.Powerup sequence is added

Jul. 23th 2001

: Recovery time of minimum 1µs is required before internal circuit gets

ready for any command sequences

~ 2.5V

~ 2.5V

VCC

High

WP

WE

1µs

2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.

0.7

1. Copy-Back Program(Dummy) is added in Command sets table.

Aug. 23th 2001

(before revision)

Function

1st.

Cycle

2nd.

Cycle

3rd.

Cycle

Page Program (True)

Page Program (Dummy)

Copy-Back Program(True)

80h

10h

-

80h

11h

-

00h

8Ah

10h

(after revision)

Function

1st.

Cycle

2nd.

Cycle

3rd.

Cycle

Page Program (True)(2)

80h

10h

-

Page Program (Dummy)(2)

80h

11h

-

Copy-Back Program(True)(2)

00h

8Ah

10h

Copy-Back Program(Dummy)(2)

03h

8Ah

11h/10h

Note 2. Page Program(True) and Copy-Back Program(True) are available on 1 plane

operation.

Page Program(Dummy) and Copy-Back Program(Dummy) are available on

the 2nd,3rd,4th plane of multi plane operation.

3

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