K9F1208Q0B-F データシートの表示（PDF） - Samsung

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K9F1208Q0B-F

64M x 8 Bit NAND Flash Memory

Samsung 

K9F1208Q0B

K9F1208D0B

K9F1208U0B

64M x 8 Bit NAND Flash Memory

PRODUCT LIST

Part Number

K9F1208Q0B-D,H

K9F1208D0B-Y,P

K9F1208D0B-D,H

K9F1208U0B-Y,P

K9F1208U0B-D,H

K9F1208U0B-V,F

Vcc Range

1.70 ~ 1.95V

2.4 ~ 2.9V

2.7 ~ 3.6V

Advance

FLASH MEMORY

PKG Type

FBGA

TSOP1

FBGA

TSOP1

FBGA

WSOP1

FEATURES

• Voltage Supply

- 1.8V device(K9F1208Q0B) : 1.70~1.95V

- 2.65V device(K9F1208D0B) : 2.4~2.9V

- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array : (64M + 2048K)bit x 8 bit

- Data Register : (512 + 16)bit x 8bit

• Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

• Page Read Operation

- Page Size : (512 + 16)Byte

- Random Access : 15µs(Max.)

- Serial Page Access : 50ns(Min.)

• Fast Write Cycle Time

- Program time : 200µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Package

- K9F1208X0B-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208X0B-GCB0/GIB0

63- Ball FBGA (8.5 x 13 , 1.0 mm width)

- K9F1208U0B-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1208X0B-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208X0B-JCB0/JIB0

63- Ball FBGA - Pb-free Package

- K9F1208U0B-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0B-V,F(WSOPI ) is the same device as

K9F1208U0B-Y,P(TSOP1) except package type.

GENERAL DESCRIPTION

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its

NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed

in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page

can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command

input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal

verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B′s extended reliability of

100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an

optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring

non-volatility.

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