K9F1208Q0B-F データシートの表示（PDF） - Samsung

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K9F1208Q0B-F

64M x 8 Bit NAND Flash Memory

Samsung 

K9F1208Q0B

K9F1208D0B

K9F1208U0B

Advance

FLASH MEMORY

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Voltage on any pin relative to VSS

K9F1208X0B-XCB0

Temperature Under Bias

K9F1208X0B-XIB0

Storage Temperature

K9F1208X0B-XCB0

K9F1208X0B-XIB0

Short Circuit Current

VIN/OUT

VCC

VCCQ

TBIAS

TSTG

Ios

Rating

1.8V DEVICE

3.3V/2.65V DEVICE

-0.6 to + 2.45

-0.6 to + 4.6

-0.2 to + 2.45

-0.6 to + 4.6

-0.2 to + 2.45

-0.6 to + 4.6

-10 to +125

-40 to +125

-65 to +150

5

Unit

V

°C

°C

mA

NOTE :

1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.

Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.

2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions

as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED OPERATING CONDITIONS

(Voltage reference to GND, K9F1208X0B-XCB0 :TA=0 to 70°C, K9F1208X0B-XIB0:TA=-40 to 85°C)

Parameter

Symbol

K9F1208Q0B(1.8V)

Min

Typ.

Max

K9F1208D0B(2.65V)

Min

Typ.

Max

K9F1208U0B(3.3V)

Unit

Min

Typ.

Max

Supply Voltage

VCC

1.70

1.8

1.95

2.4

2.65

2.9

2.7

3.3

3.6

V

Supply Voltage

VCCQ

1.70

1.8

1.95

2.4

2.65

2.9

2.7

3.3

3.6

V

Supply Voltage

VSS

0

0

0

0

0

0

0

0

0

V

11

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