IN74HC20 データシートの表示（PDF） - Integral Corp.

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IN74HC20

DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS

Integral Corp. 

IN74HC20

AC ELECTRICAL CHARACTERISTICS(CL=50pF,Input tr=tf=6.0 ns)

VCC

Guaranteed Limit

Symbol

Parameter

V 25 °C ≤85°C ≤125° Unit

to

C

-55°C

tPLH, Maximum Propagation Delay, Input A 2.0 90

tPHL ,B,C or D to Output Y (Figures 1 and 2) 4.5 18

6.0 15

115 135 ns

23

27

20

23

tTLH, tTHL Maximum Output Transition Time, Any 2.0 75

Output (Figures 1 and 2)

4.5 15

95 110 ns

19

22

6.0 13

16

19

CIN Maximum Input Capacitance

- 10

10

10 pF

Power Dissipation Capacitance (Per Typical @25°C,VCC=5.0 V

Gate)

CPD Used to determine the no-load dynamic

26

pF

power

consumption:

PD=CPDVCC2f+ICCVCC

Figure 1. Switching Waveforms

Figure 2. Test Circuit

EXPANDED LOGIC DIAGRAM

(1/2 of the Device)

4

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