IN74HC20 データシートの表示（PDF） - Integral Corp.

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IN74HC20

DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS

Integral Corp. 

IN74HC20

DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)

VCC

Guaranteed Limit

Symbol

Parameter

Test Conditions

V 25 °C ≤85 ≤125 Unit

to

°C

°C

-55°C

VIH Minimum High- VOUT=0.1 V or VCC-0.1 V 2.0 1.5

1.5

1.5 V

Level

Input IOUT≤ 20 µA

4.5 3.15 3.15 3.15

Voltage

6.0 4.2

4.2

4.2

VIL Maximum Low - VOUT=0.1 V or VCC-0.1 V 2.0 0.3

0.3

0.3 V

Level

Input IOUT ≤ 20 µA

4.5 0.9

0.9

0.9

Voltage

6.0 1.2

1.2

1.2

VOH Minimum High- VIN= VIH or VIL 2.0 1.9

1.9

1.9 V

Level

Output IOUT ≤ 20 µA

4.5 4.4

4.4

4.4

Voltage

6.0 5.9

5.9

5.9

VIN= VIH or VIL

IOUT ≤ 4.0 mA 4.5 3.98 3.84

3.7

IOUT ≤ 5.2 mA

6.0 5.48 5.34 5.2

VOL Maximum Low- VIN=VIH

Level

Output IOUT ≤ 20 µA

Voltage

2.0 0.1

0.1

0.1 V

4.5 0.1

0.1

0.1

6.0 0.1

0.1

0.1

VIN=VIH

IOUT ≤ 4.0 mA 4.5 0.26 0.33

0.4

IOUT ≤ 5.2 mA

6.0 0.26 0.33 0.4

IIN

Maximum Input VIN=VCC or GND

Leakage Current

6.0 ±0.1 ±1.0 ±1.0 µA

ICC Maximum

VIN=VCC or GND 6.0 2.0

20

40 µA

Quiescent Supply IOUT=0µA

Current

(per Package)

3

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