IKW15N120T2 データシートの表示（PDF） - Infineon Technologies

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IKW15N120T2

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW15N120T2

TrenchStop® 2nd generation Series

td(off)

tf

100ns

td(on)

10ns

tr

7.5A

15.0A

22.5A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, RG=41.8Ω,

Dynamic test circuit in Figure E)

1000 ns

td(off)

tf

100 ns

td(on)

10 ns tr

10Ω 30Ω 50Ω 70Ω 90Ω 110Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=175°C,

VCE=600V, VGE=0/15V, IC=15A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=15A, RG=41.8Ω,

Dynamic test circuit in Figure E)

6.5V

6.0V

5.5V

5.0V

max.

4.5V

4.0V

typ.

3.5V

min.

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 600µA)

Power Semiconductors

7

Rev. 2.1 Sep 08

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