IKW15N120T2 データシートの表示（PDF） - Infineon Technologies
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IKW15N120T2
Infineon Technologies
IKW15N120T2 Datasheet PDF : 15 Pages
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IKW15N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology
with soft, fast recovery anti-parallel EmCon diode
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® 2nd generation for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• Easy paralleling capability due to positive temperature coefficient
in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW15N120T2 1200V 15A
1.75V
175°C K15T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current (Tj = 150°C)
TC = 25°C
TC = 110°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 175°C
Diode forward current (Tj = 150°C)
TC = 25°C
TC = 110°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 600V, Tj, start ≤ 175°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
30
15
60
60
25
15
60
±20
10
235
-40...+175
-55...+150
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 Sep 08
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