IDT7132 データシートの表示（PDF） - Integrated Device Technology

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IDT7132

HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS

Integrated Device Technology 

IDT7132SA/LA and IDT 7142SA/LA

High Speed 2K x 8 Dual Port Static RAM

Military, Industrial and Commercial Temperature Ranges

DC Electrical Characteristics Over the Operating

Temperature Supply Voltage Range (VCC = 5.0V ± 10%)

7132SA

7142SA

7132LA

7142LA

Symbol

|ILI|

Parameter

Input Leakage Current(1)

Test Conditions

VCC = 5.5V,

VIN = 0V to VCC

Min. Max. Min. Max. Unit

___

10

___

5

µA

|ILO|

Output Leakage Current

VCC = 5.5V,

CE = VIH, VOUT = 0V to VCC

___

10

___

5

µA

VOL

Output Low Voltage

IOL = 4mA

___

0.4

___

0.4

V

VOL

Open Drain Output

Low Voltage (BUSY)

IOL = 16mA

___

0.5

___

0.5

V

VOH

Output High Voltage

IOH = -4mA

2.4

___

2.4

___

V

NOTE:

1. At Vcc < 2.0V leakages are undefined.

2692 tbl 05

Data Retention Characteristics (LA Version Only)

Symbol

Parameter

Test Condition

VDR

VCC for Data Retention

VCC = 2.0V

ICCDR

Data Retention Current

CE > VCC -0.2V

Mil. & Ind.

VIN > VCC -0.2V or

Com'l.

tCDR(3)

Chip Deselect to Data Retention Time

VIN < 0.2V

tR(3)

Operation Recovery Time

NOTES:

1. VCC = 2V, TA = +25°C, and is not production tested.

2. tRC = Read Cycle Time

3. This parameter is guaranteed but not production tested.

Min.

2.0

___

___

0

tRC(2)

Typ.(1)

___

100

100

___

___

Max. Unit

___

V

4000

µA

1500 µA

___

ns

___

ns

2692 tbl 06

Data Retention Waveform

DATA RETENTION MODE

VCC

CE

4.5V

tCDR

VIH

VDR≥ 2.0V

VDR

4.5V

tR

VIH

,

2692 drw 05

6.542

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