IDT70V24L20GI データシートの表示（PDF） - Integrated Device Technology
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IDT70V24L20GI Datasheet PDF : 22 Pages
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IDT70V24S/L
High-Speed 4K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5)
70V24X15
Com'l Only
70V24X20
Com'l
& Ind
70V24X25
Com'l
& Ind
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
tEW
Chip Enable to End-of-Write(3)
15
____
20
____
25
____
ns
12
____
15
____
20
____
ns
tAW
Address Valid to End-of-Write
tAS
Address Set-up Time(3)
12
____
15
____
20
____
ns
0
____
0
____
0
____
ns
tWP
Write Pulse Width
12
____
15
____
20
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
tHZ
Output High-Z Time(1,2)
tDH
Data Hold Time(4)
tWZ
Write Enable to Output in High-Z(1,2)
tOW
Output Active from End-of-Write(1,2,4)
10
____
15
____
15
____
ns
____
10
____
12
____
15
ns
0
____
0
____
0
____
ns
____
10
____
12
____
15
ns
0
____
0
____
0
____
ns
tSWRD
tSPS
SEM Flag Write to Read Time
SEM Flag Contention Window
5
____
5
____
5
____
ns
5
____
5
____
5
____
ns
2911 tbl 12a
70V24X35
Com'l
& Ind
70V24X55
Com'l
& Ind
Symbol
Parameter
Min. Max. Min. Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
tEW
Chip Enable to End-of-Write(3)
35
____
55
____
ns
30
____
45
____
ns
tAW
Address Valid to End-of-Write
tAS
Address Set-up Time(3)
30
____
45
____
ns
0
____
0
____
ns
tWP
Write Pulse Width
25
____
40
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tDW
Data Valid to End-of-Write
tHZ
Output High-Z Time(1,2)
tDH
Data Hold Time(4)
tWZ
Write Enable to Output in High-Z(1,2)
tOW
Output Active from End-of-Write(1,2,4)
15
____
30
____
ns
____
15
____
25
ns
0
____
0
____
ns
____
15
____
25
ns
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
ns
NOTES:
2911 tbl 12b
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access SRAM, CE = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH or UB and LB = VIH and SEM = VIL. Either condition must be valid for
the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over
voltage and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part number indicates power rating (S or L).
61.402
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