IDT70261SL データシートの表示（PDF） - Integrated Device Technology
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IDT70261SL Datasheet PDF : 19 Pages
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IDT70261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage (5)
70261X15
Com'l Only
70261X20
Com'l & Ind
70261X25
Com'l & Ind
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
tEW
Chip Enable to End-of-Write(3)
15
____
20
____
25
____
ns
12
____
15
____
20
____
ns
tAW
Address Valid to End-of-Write
tAS
Address Set-up Time(3)
12
____
15
____
20
____
ns
0
____
0
____
0
____
ns
tWP
Write Pulse Width
12
____
15
____
20
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
tHZ
tDH
tWZ
tOW
tSWRD
tSPS
Data Valid to End-of-Write
Output High-Z Time(1,2)
Data Hold Time(4)
Write Enable to Output in High-Z(1,2)
Output Active from End-of-Write(1,2,4)
SEM Flag Write to Read Time
SEM Flag Contention Window
10
____
15
____
15
____
ns
____
10
____
12
____
15
ns
0
____
0
____
0
____
ns
____
10
____
12
____
15
ns
0
____
0
____
0
____
ns
5
____
5
____
5
____
ns
5
____
5
____
5
____
ns
70261X35
Com'l Only
70261X55
Com'l Only
3039 tbl 13a
Symbol
Parameter
Min.
Max.
Min.
Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
tEW
Chip Enable to End-of-Write(3)
35
____
55
____
ns
30
____
45
____
ns
tAW
Address Valid to End-of-Write
tAS
Address Set-up Time(3)
30
____
45
____
ns
0
____
0
____
ns
tWP
Write Pulse Width
25
____
40
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tDW
tHZ
tDH
tWZ
tOW
tSWRD
tSPS
Data Valid to End-of-Write
Output High-Z Time(1,2)
Data Hold Time(4)
Write Enable to Output in High-Z(1,2)
Output Active from End-of-Write(1,2,4)
SEM Flag Write to Read Time
SEM Flag Contention Window
15
____
30
____
ns
____
15
____
25
ns
0
____
0
____
ns
____
15
____
25
ns
0
____
0
____
ns
5
____
5
____
ns
5
____
5
____
ns
NOTES:
3039 tbl 13b
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part numbers indicates power rating (S or L).
6.842
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