HM-65642 データシートの表示（PDF） - Intersil
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HM-65642 Datasheet PDF : 7 Pages
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HM-65642
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input or Output Voltage Applied for All Grades. . . . . . .GND -0.3V to
VCC +0.3V
Typical Derating Factor . . . . . . . . . . . . 5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance (Typical)
θJA
CERDIP Package . . . . . . . . . . . . . . . . 45oC/W
θJC
8oC/W
Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +175oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101,000 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
HM-65642-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +0.8V
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . +2.2V to VCC +0.3V
DC Electrical Specifications VCC = 5V ±10%; TA = -40oC to +85oC (HM-65642-9)
LIMITS
SYMBOL
PARAMETER
MIN
MAX
UNITS
ICCSB1 Standby Supply Current (CMOS)
-
250
µA
ICCSB2 Standby Supply Current (TTL)
-
5
mA
ICCDR Data Retention Supply Current
-
150
µA
ICCEN Enabled Supply Current
-
5
mA
ICCOP Operating Supply Current (Note 1)
-
20
mA
II
Input Leakage Current
IIOZ
Input/Output Leakage Current
-1.0
+1.0
µA
-1.0
+1.0
µA
VCCDR
VOH1
VOH2
VOL
Data Retention Supply Voltage
Output High Voltage
Output High Voltage (Note 2)
Output Low Voltage
2.0
-
V
2.4
-
V
VCC -0.4
-
V
-
0.4
V
TEST CONDITIONS
E2 = GND, VCC = 5.5V
E2 = 0.8V or E1 = 2.2V, VCC = 5.5V
E2 = GND, VCC = 2.0V
E2 = 2.2V, E1 = 0.8V, VCC = 5.5V,
IIO = 0mA
f = 1MHz, E1 = 0.8V, E2 = 2.2V,
VCC = 5.5V, IIO = 0mA
VI = VCC or GND, VCC = 5.5V
E2 = GND, VIO = VCC or GND,
VCC = 5.5V
IOH = -1.0mA, VCC = 4.5V
IOH = -100µA, VCC = 4.5V
IOL = 4.0mA, VCC = 4.5V
Capacitance TA = +25oC
SYMBOL
PARAMETER
CI
Input Capacitance (Note 2)
CIO
Input/Output Capacitance (Note 2)
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
MAX
12
14
UNITS
pF
pF
TEST CONDITIONS
f = 1MHz, All measurements are
referenced to device GND
6-3
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