DIM200PHM33-F000(2004) データシートの表示（PDF） - Dynex Semiconductor

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DIM200PHM33-F000
(Rev.:2004)

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200PHM33-F000

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety

precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Tcase = 25˚C unless stated otherwise

Symbol

Parameter

Test Conditions

VCES

V

GES

IC

IC(PK)

Pmax

I2t

V

isol

QPD

Collector-emitter voltage

Gate-emitter voltage

VGE = 0V, Tj = –25˚C

-

Continuous collector current

Tcase = 90˚C

Peak collector current

1ms, Tcase = 115˚C

Max. transistor power dissipation T = 25˚C, T = 150˚C

case

j

Diode I2t value (Diode arm)

VR = 0, tp = 10ms, Tvj = 125˚C

Isolation voltage - per module

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Partial discharge - per module

IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS

Max. Units

3300 V

±20 V

200 A

400 A

2.6 kW

20 kA2s

6000 V

10 pC

2/9

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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