BUW41A データシートの表示（PDF） - Inchange Semiconductor

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BUW41A

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

BUW41/A/B

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BUW41

BUW41A IC= 200mA ; IB= 0

BUW41B

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA ; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB=B 1A

IC= 5A; IB=B 1A,TC= 150℃

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1A

ICEV

Collector

Cutoff Current

BUW41

BUW41A

BUW41B

VCE= 450V;VBE= -1.5V

VCE= 450V;VBE= -1.5V,TC= 150℃

VCE= 550V;VBE= -1.5V

VCE= 550V;VBE= -1.5V,TC= 150℃

VCE= 650V;VBE= -1.5V

VCE= 650V;VBE= -1.5V,TC= 150℃

IEBO

Emitter Cutoff Current

VEB= 6V; IC=0

hFE

DC Current Gain

IC= 5A ; VCE= 3V

fT

Current-Gain—Bandwidth Product

IC= 0.5A ;VCE= 10V

MIN TYP. MAX UNIT

300

350

V

400

6

V

1.0

2.0

V

1.6 V

0.1

1.0

0.1

1.0

mA

0.1

1.0

1.0 mA

10

15

MHz

isc Website：www.iscsemi.cn

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