BUW41A データシートの表示（PDF） - Inchange Semiconductor

部品番号

コンポーネント説明

一致するリスト

BUW41A

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

BUW41/A/B

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 300V(Min)- BUW41

= 350V(Min)- BUW41A

= 400V(Min)- BUW41B

·High Switching Speed

·High Power Dissipation

APPLICATIONS

·Designed for high voltage and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BUW41

450

VCEV

Collector-Emitter Voltage

VBE= -1.5V

BUW41A

550

V

BUW41B

650

BUW41

300

VCEO(SUS) Collector-Emitter Voltage BUW41A

350

V

BUW41B

400

VEBO Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

8

A

PC

Collector Power Dissipation@TC=25℃

100

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150 ℃

isc Website：www.iscsemi.cn

Share Link: