BSP16T1(2004) データシートの表示（PDF） - ON Semiconductor

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BSP16T1
(Rev.:2004)

High Voltage Transistors

ON Semiconductor 

BSP16T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = −50 mAdc, IB = 0, L = 25 mH)

Collector −Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

Collector−Emitter Cutoff Current

(VCE = −250 Vdc, IB = 0)

Collector−Base Cutoff Current

(VCB = −280 Vdc, IE = 0)

Emitter−Base Cutoff Current

(VEB = −6.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(VCE = − 10 Vdc, IC = −50 mAdc)

Collector-Emitter Saturation Voltage

(IC = − 50 mAdc, IB = − 5.0 mAdc)

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(VCE = − 10 Vdc, IC = −10 mAdc, f = 30 MHz)

Collector−Base Capacitance

(VCB = − 10 Vdc, IE = 0, f = 1.0 MHz)

Symbol

Min

V(BR)CEO

V(BR)CBO

ICES

ICBO

IEBO

−300

−300

−

−

−

hFE

30

VCE(sat)

−

fT

15

Cobo

−

Max

−

−

−50

−1.0

−20

Unit

Vdc

Vdc

mAdc

mAdc

mAdc

120

− 2.0

−

15

−

Vdc

MHz

pF

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