BAT82 データシートの表示（PDF） - Philips Electronics

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BAT82

Schottky barrier diodes

Philips Electronics 

Philips Semiconductors

Schottky barrier diodes

Product specification

BAT81; BAT82; BAT83

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

CONDITIONS

see Fig.2

IF = 0.1 mA

IF = 1 mA

IF = 15 mA

VR = VRmax; see Fig.3

f = 1 MHz; VR = 1 V; see Fig.4

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SOD68 standard mounting conditions.

CONDITIONS

MAX.

UNIT

330

mV

410

mV

1

V

200

nA

1.6

pF

VALUE

320

UNIT

K/W

1996 Mar 20

3

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