BAT82 データシートの表示（PDF） - Philips Electronics
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BAT82 Datasheet PDF : 5 Pages
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Philips Semiconductors
Schottky barrier diodes
Product specification
BAT81; BAT82; BAT83
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed leaded glass
package
• Low diode capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
handbook, halfpakge
a
MAM193
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VR
continuous reverse voltage
BAT81
BAT82
BAT83
IF
continuous forward current
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward current
tp ≤ 10 ms
Tstg
storage temperature
Tj
junction temperature
MIN. MAX. UNIT
−
40
V
−
50
V
−
60
V
−
30
mA
−
150
mA
−
500
mA
−65
150
°C
−
125
°C
1996 Mar 20
2
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