AT-38086 データシートの表示（PDF） - HP => Agilent Technologies

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AT-38086

4.8 V NPN Silicon Bipolar Common Emitter Transistor

HP => Agilent Technologies 

4.8 V NPN Silicon Bipolar

Common␣ Emitter Transistor

Technical Data

AT-38086

Features

• 4.8 Volt Pulsed

(pulse width = 577 µsec,

duty cycle = 12.5%)/CW

Operation

• +28 dBm Pulsed Pout

@␣ 900␣ MHz,Typ.

• +23.5 dBm CW Pout

@␣ 836.5␣ MHz,Typ.

• 60% Pulsed Collector

Efficiency @ 900 MHz, Typ.

• 11 dB Pulsed Power Gain

@␣ 900 MHz, Typ.

• -35 dBc IMD3 @ Pout of

17␣ dBm per tone, 900 MHz,

Typ.

Applications

• Driver Amplifier for GSM

and AMPS/ETACS/ 900 MHz

NMT Cellular Phones

• 900 MHz ISM and Special

Mobile Radio

85 mil Plastic Surface

Mount Package

Outline 86

Pin Configuration

4

EMITTER

1

BASE

2

EMITTER

3

COLLECTOR

Description

Hewlett Packard’s AT-38086 is a

low cost, NPN silicon bipolar

junction transistor housed in a

surface mount plastic package.

This device is designed for use as

a pre-driver or driver device in

applications for cellular and

wireless communications

markets. At 4.8 volts, the

AT-38086 features +28 dBm pulsed

output power, Class AB operation,

and +23.5␣ dBm CW. Superior

efficiency and gain makes the

AT-38086 an excellent choice for

battery powered systems.

The AT-38086 is fabricated with

Hewlett Packard’s 10 GHz Ft Self-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by the

use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

4-89

5965-5959E

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