AS7C1024C データシートの表示（PDF） - Alliance Semiconductor

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AS7C1024C

5V 128K X 8 CMOS SRAM

Alliance Semiconductor 

AS7C1024C

®

Recommended operating conditions

Parameter

Symbol

Supply Voltage

VCC

Input Voltage

VIH

VIL(1)

Ambient operating temperature (Industrial)

TA

Note:

1 VIL min = -1.5V for pulse width less than 10ns, once per cycle.

Min

4.5

2.2

–0.5(1)

–40

Nominal

5.0

-

–

–

Max

Unit

5.5

V

VCC + 0.5

V

0.8

V

85

°C

DC operating characteristics (over the operating range)1

Parameter

Input leakage current

Output leakage current

Operating power supply current

Standby power supply current1

Output voltage

Symbol

|ILI|

|ILO|

ICC

ISB

ISB1

VOL

VOH

Test conditions

VCC = Max, VIN = GND to VCC

VCC = Max, CE1 = VIH or

CE2 = VIL, VOUT = GND to VCC

VCC = Max, CE1 ≤ VIL,

CE2 ≥ VIH, f = fMax,

IOUT = 0 mA

VCC = Max, CE1 ≥ VIH and/or

CE2 ≤ VIL, f = fMax

VCC = Max, CE1 ≥ VCC–0.2V

and/or CE2 ≤ 0.2V

VIN ≤ 0.2V or

VIN ≥ VCC – 0.2V, f = 0

IOL = 8 mA, VCC = Min

IOH = –4 mA, VCC = Min

AS7C1024C-12

Min Max Unit

–

5 μA

–

5 μA

–

160 mA

–

40 mA

–

10 mA

–

0.4 V

2.4

–

V

Capacitance (f = 1 MHz, Ta = 25o C, VCC = NOMINAL)2

Parameter

Symbol

Signals

Input capacitance

I/O capacitance

CIN A, CE1, CE2, WE, OE

CI/O

I/O

Note:

This parameter is guaranteed by device characterization, but is not production tested.

Test conditions

VIN = 3dV

VOUT = 3dV

Max

Unit

7

pF

8

pF

12/5/06, v. 1.0

Alliance Memory

P. 3 of 9

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