2SJ386 データシートの表示（PDF） - Hitachi -> Renesas Electronics
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2SJ386 Datasheet PDF : 7 Pages
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2SJ386
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
Ta = 25 °C
Pulse Test
–4
–3
–2
I D = –5 A
–1
–3 A
–1 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Ta = 25 °C
5 Pulse Test
2
1
0.5
VGS = –4 V
–10 V
0.2
0.1
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
1.0
I D = –3 A
0.8
VGS = –4 V
–1 A
0.6
I D = –5 A
0.4
–3 A –1 A
0.2
VGS = –10 V
0
–40
0
40 80 120 160
Ambient Temperature Ta (°C)
Forward Transfer Admittance vs.
Drain Current
10
5
Ta = –25 °C
2
25 °C
1
75 °C
0.5
0.2
0.1
–0.1
–0.2 –0.5 –1
Drain Current
V DS = –10 V
Pulse Test
–2 –5 –10
I D (A)
4
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