2SJ386
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch
Tch
Tstg
Ratings
Unit
–30
V
±20
V
–3
A
–5
A
–3
A
0.9
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
–30
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
–1.0
—
—
Typ
—
—
—
—
—
0.3
0.55
Forward transfer admittance |yfs|
1.0 1.7
Input capacitance
Ciss
—
177
Output capacitance
Coss —
120
Reverse transfer capacitance Crss
—
59
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
tr
t d(off)
tf
—
8
—
28
—
45
—
60
Max
—
—
±10
–10
–2.5
0.4
0.8
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –24 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –2 A
VGS = –10 V*1
ID = –2 A
VGS = –4 V*1
ID = –1 A
VDS = –10 V*1
VDS = –10 V
VGS = 0
f = 1 MHz
ID = –2 A
VGS = –10 V
RL = 15 Ω
2