2SC2707 データシートの表示（PDF） - Inchange Semiconductor

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2SC2707

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC2707

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0

180

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

180

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A

ICBO

Collector Cutoff Current

VCB= 180V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

3.0

V

100 μA

100 μA

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

55

160

hFE-2

DC Current Gain

IC= 5A ; VCE= 5V

30

fT

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 12V

80

MHz

isc Website：www.iscsemi.cn

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