2SC2707 データシートの表示（PDF） - Inchange Semiconductor

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2SC2707

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC2707

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 180V(Min.)

·High Power Dissipation

·Complement to Type 2SA1147

APPLICATIONS

·Designed for power switching amplifier and general

purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

180

V

VCEO Collector-Emitter Voltage

180

V

VEBO Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IBB

Base Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature

5

A

150

W

150

℃

-65~150 ℃

isc Website：www.iscsemi.cn

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