2MBI150VA-120-50 データシートの表示（PDF） - Fuji Electric
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2MBI150VA-120-50 Datasheet PDF : 6 Pages
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2MBI150VA-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Forward Current vs. Forward Voltage (typ.)
chip
350
300
Tj=125°C
250
200
150
100
125°C
150°C
50
0
0
1
2
3
Forward on voltage: VF [V]
Reverse Recovery Characteristics (typ.)
VCC=600V, VGE=±15V, RG=1.1Ω, Tj=150°C
1000
lrr
trr
100
10
0
100
200
300
400
Forward current: IF [A]
FWD safe operating area (max.)
Tj=150°C
350
300
250
Pmax=150kW
200
150
100
50
0
0
500
1000
1500
Collector-Emitter voltage: VCE [V]
(Main terminals)
4
Reverse Recovery Characteristics (typ.)
VCC=600V, VGE=±15V, RG=1.1Ω, Tj=125°C
1000
lrr
trr
100
10
0
100
200
300
400
Forward current: IF [A]
Transient Thermal Resistance (max.)
1
FWD
0.1
IGBT
0.01
0.001
τ
Rth
[°C/W]
0.001
[sec]
IGBT
FWD
0.0023
0.02038
0.03325
0.0301
0.05167
0.08430
0.0598
0.07299
0.11910
0.01
0.1
Pulse Width : Pw [sec]
0.0708
0.04496
0.07335
1
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