2MBI150VA-120-50 データシートの表示（PDF） - Fuji Electric
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2MBI150VA-120-50 Datasheet PDF : 6 Pages
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2MBI150VA-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.1Ω, Tj=125°C
10000
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.1Ω, Tj=150°C
10000
1000
100
10
0
ton
toff
tr
tf
100
200
300
400
Collector current: IC [A]
1000
100
10
0
ton
toff
tr
tf
100
200
300
400
Collector current: IC [A]
Switching time vs. Gate resistance (typ.)
VCC=600V, IC=150A, VGE=±15V, Tj=125°C
10000
1000
ton
toff
tr
100
tf
10
0.1
1
10
100
Gate resistance: RG [Ω]
Switching loss vs. Gate resistance (typ.)
VCC=600V, IC=150A, VGE=±15V, Tj=125, 150°C
20
18
Eon
16
Eoff
14
12
10
Err
8
6
4
Tj=125 oC
2
Tj=150 oC
0
0
1
10
100
Gate resistance: RG [Ω]
3
Switching loss vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.1Ω, Tj=125, 150°C
45
40
Tj=125 oC
35
Tj=150 oC
Eon
30
25
Eoff
20
Err
15
10
5
0
0
100
200
300
400
Collector current: IC [A]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, RG=1.1Ω, Tj=150°C
350
300
250
200
150
100
50
0
0
400
800
1200
1600
Collector-Emitter voltage: VCE [V]
(Main terminals)
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