10WT10FNTR データシートの表示（PDF） - Vishay Semiconductors

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10WT10FNTR

High Performance Generation 5.0 Schottky Rectifier, 10 A

Vishay Semiconductors 

www.vishay.com

1000

VS-10UT10, VS-10WT10FN

Vishay Semiconductors

100

10

10

100

1000

10 000

tp - Square Wave Pulse Duration (µs)

Fig. 7 - Maximum Non-Repetitive Surge Current

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);

PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

100

10

TJ = 125 °C

TJ = 175 °C

TJ = 25 °C

1

1

10

100

Rectangular Pulse Duration (µs)

Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)

100

10

TJ = 25 °C

TJ = 125 °C

TJ = 175 °C

1

1

10

100

Rectangular Pulse Duration (µs)

Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)

Revision: 10-Aug-11

4

Document Number: 94647

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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