10WT10FNTR データシートの表示（PDF） - Vishay Semiconductors

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10WT10FNTR

High Performance Generation 5.0 Schottky Rectifier, 10 A

Vishay Semiconductors 

www.vishay.com

1000

VS-10UT10, VS-10WT10FN

Vishay Semiconductors

100

10

0

20

40

60

80

100

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

D = 0.75

D = 0.50

D = 0.33

0.1

D = 0.25

D = 0.20

Single pulse

(thermal resistance)

0.01

0.00001

0.0001

0.001

0.01

0.1

1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

180

175

170

DC

165

160

155 Square wave (D = 0.50)

80 % rated VR applied

150

See note (1)

145

0 2 4 6 8 10 12 14 16

IF(AV) Average Forward Current (A)

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

10

180°

120°

8

90°

60°

30°

6

4

RMS limit

DC

2

0

0

3

6

9

12

15

IF(AV) - Average Forward Current (A)

Fig. 6 - Forward Power Loss Characteristics

Revision: 10-Aug-11

3

Document Number: 94647

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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