K9F4G08U0M データシートの表示（PDF） - Samsung

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K9F4G08U0M

512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

Samsung 

K9K8G08U1M

K9F4G08U0M

512M x 8 Bit / 1G x 8 Bits NAND Flash Memory

PRODUCT LIST

Part Number

K9F4G08U0M-Y,P

K9F4G08U0M-I

K9K8G08U1M-I

Vcc Range

2.70 ~ 3.60V

Organization

X8

Advance

FLASH MEMORY

PKG Type

TSOP1

52ULGA

FEATURES

• Voltage Supply

- 2.70V ~ 3.60V

• Organization

- Memory Cell Array : (512M + 16,384K)bit x 8bit

- Data Register : (2K + 64)bit x 8bit

• Automatic Program and Erase

- Page Program : (2K + 64)Byte

- Block Erase : (128K + 4K)Byte

• Page Read Operation

- Page Size : (2K + 64)Byte

- Random Read : 20µs(Max.)

- Serial Access : 25ns(Min.)

• Fast Write Cycle Time

- Page Program time : 200µs(Typ.)

- Block Erase Time : 1.5ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Driven Operation

• Intelligent Copy-Back with internal 1bit/528Byte EDC

• Unique ID for Copyright Protection

• Package :

- K9F4G08U0M-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F4G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F4G08U0M-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

- K9K8G08U1M-ICB0/IIB0

52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

GENERAL DESCRIPTION

Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost-

effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte

page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data page can be read out at

25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip

write controller automates all program and erase functions including pulse repetition, where required, and internal verification and

margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0M′s extended reliability of 100K program/

erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0M is an optimum solu-

tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

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