K9F4G08U0M データシートの表示（PDF） - Samsung
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K9F4G08U0M Datasheet PDF : 41 Pages
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K9K8G08U1M
K9F4G08U0M
Advance
FLASH MEMORY
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
tPROG(2)
-
200
700
µs
Dummy Busy Time for Two-Plane Page Program
tDBSY
-
0.5
1
µs
Number of Partial Program Cycles
in the Same Page
Main Array
Spare Array
Nop
-
-
-
-
4
cycles
4
cycles
Block Erase Time
tBERS
-
1.5
2
ms
NOTE : 1. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
2. Typical program time is defined as the time that more than 50% of the whole pages are programmed at Vcc of 3.3V and temperature of 25°C
within.
AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
ALE to Data Loading Time
Symbol
tCLS(1)
tCLH
tCS(1)
tCH
tWP
tALS(1)
tALH
tDS(1)
tDH
tWC
tWH
tADL(2)
Min
12
5
20
5
12
12
5
12
5
25
10
70
Max
-
-
-
-
-
-
-
-
-
-
-
-
NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
11
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