K8P5616UZB データシートの表示（PDF） - Samsung

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K8P5616UZB

256Mb B-die Page NOR FLASH

Samsung 

K8P5616UZB

Rev. 1.0

datasheet NOR FLASH MEMORY

7.0 ORDERING INFORMATION

K8 P 56 16 U Z B - P I 4E

Samsung

NOR Flash Memory

Device Type

P : Page Mode

Density

56 : 256Mbits, 4 Bank

Access Time

4E : 80ns/30ns

Operating Temperature Range

C : Commercial Temp. (0 °C to 70 °C)

E : Extended Temp. (-25 °C to 85 °C)

I : Industrial Temp. (-40 °C to 85 °C)

Package

E : FBGA(Lead Free, 1.0mm ball pitch)

P : TSOP1(Lead Free)

Organization

16 : x16 , x8 Organization

Version

B : 3th Generation

Operating Voltage Range

U : 2.7 V to 3.6V

Block Architecture

Z : Uniform Block

[Table 1] PRODUCT LINE-UP

Vcc

VIO

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

Max. Page Access Time (ns)

4E

2.7V~3.6V

1.7V~Vcc

80ns

80ns

30ns

30ns

[Table 2] K8P5616UZB DEVICE BLOCK DIVISIONS

Bank 0, Bank 3

Mbit

Block Sizes

32 Mbit

64 Kw x 32

Mbit

96 Mbit

Bank 1, Bank 2

Block Sizes

64 Kw x 96

[Table 3] OTP BLOCK

OTP

Block Address

A23~A8

0000h

Area

Factory-Locked Area

Customer-Locked Area

Block Size

128 words

128 words

After entering OTP block, any issued addresses should be in the range of OTP block address

Address Range

000000h-00007Fh

000080h-0000FFh

-9-

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