K9F1208Q0A データシートの表示（PDF） - Samsung

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K9F1208Q0A

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Samsung 

K9F5608U0C-VCB0,VIB0,FCB0,FIB0

K9F5608Q0C-DCB0,DIB0,HCB0,HIB0

K9F5608U0C-YCB0,YIB0,PCB0,PIB0

K9F5608U0C-DCB0,DIB0,HCB0,HIB0

K9F5616Q0C-DCB0,DIB0,HCB0,HIB0

K9F5616U0C-YCB0,YIB0,PCB0,PIB0

K9F5616U0C-DCB0,DIB0,HCB0,HIB0

FLASH MEMORY

NAND Flash Technical Notes (Continued)

Erase Flow Chart

Read Flow Chart

Start

Start

Write 60h

Write 00h

Write Block Address

Write Address

Write D0h

Read Status Register

Read Data

ECC Generation

I/O 6 = 1 ?

No

or R/B = 1 ?

*

No

Erase Error

Yes

I/O 0 = 0 ?

Yes

Erase Completed

No

Reclaim the Error

Verify ECC

Yes

Page Read Completed

* : If erase operation results in an error, map out

the failing block and replace it with another block.

Block Replacement

{ 1st

(n-1)th

nth

(page)

Block A

an error occurs.

2

Buffer memory of the controller.

Block B

{ 1st

(n-1)th

1

nth

(page)

* Step1

When an error happens in the nth page of the Block ’A’during erase or program operation.

* Step2

Copy the nth page data of the Block ’A’in the buffer memory to the nth page of another free block. (Block ’B’)

* Step3

Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.

* Step4

Do not further erase Block ’A’by creating an ’invalid Block’table or other appropriate scheme.

15

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