datasheetbank_Logo
データシート検索エンジンとフリーデータシート

K9F1208Q0A データシートの表示(PDF) - Samsung

部品番号
コンポーネント説明
一致するリスト
K9F1208Q0A Datasheet PDF : 39 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
K9F56XXX0C-XCB0
K9F56XXX0C-XIB0
K9F56XXX0C-XCB0
K9F56XXX0C-XIB0
Symbol
VIN/OUT
VCC
VCCQ
TBIAS
TSTG
Ios
Rating
K9F56XXQ0C(1.8V) K9F56XXU0C(3.3V)
-0.6 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-10 to +125
-40 to +125
-65 to +150
5
Unit
V
°C
°C
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F56XXX0C-XCB0 :TA=0 to 70°C, K9F56XXX0C-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F56XXQ0C(1.8V)
Min
Typ.
Max
K9F56XXU0C(3.3V)
Unit
Min
Typ.
Max
Supply Voltage
VCC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
VCCQ
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9F56XXQ0C(1.8V)
Min Typ Max
K9F56XXU0C(3.3V)
Min Typ Max
Unit
Operat- Sequential Read
ing
Current Program
Erase
ICC1
ICC2
ICC3
tRC=50ns, CE=VIL
IOUT=0mA
-
-
-
8
15
- 10
20
-
8
15
- 10
25
mA
-
8
15
- 10
25
Stand-by Current(TTL)
ISB1 CE=VIH, WP=0V/VCC
-
-
1
-
-
1
Stand-by Current(CMOS)
ISB2 CE=VCC-0.2, WP=0V/VCC
-
10 50
- 10
50
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±10
-
-
±10
µA
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±10
-
-
±10
Input High Voltage
I/O pins
VIH
Except I/O pins
Input Low Voltage, All inputs VIL
-
VCCQ-0.4 -
VCCQ
2.0
+0.3
- VCCQ+0.3
VCC
VCC-0.4 -
2.0 - VCC+0.3
+0.3
-0.3
-
0.4 -0.3 -
0.8
V
K9F56XXQ0C :IOH=-100µA
Output High Voltage Level
VOH
VCCQ-0.1 -
-
2.4 -
-
K9F56XXU0C :IOH=-400µA
K9F56XXQ0C :IOL=100uA
Output Low Voltage Level
VOL
-
K9F56XXU0C :IOL=2.1mA
-
0.1
-
-
0.4
K9F56XXQ0C :VOL=0.1V
Output Low Current(R/B)
IOL(R/B)
3
4
-
8 10
-
mA
K9F56XXU0C :VOL=0.4V
10

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]